16 Mbit / 32 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201
A Microchip Technology Company
SST39VF1602 / SST39VF3202
Not Recommended for New Designs
Table 8: System Interface Information for SST39VF160x/320x
Address
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
Data
0027H
0036H
0000H
0000H
0003H
0000H
0004H
0005H
0001H
0000H
0001H
0001H
Data
V DD Min (Program/Erase)
DQ 7 -DQ 4 : Volts, DQ 3 -DQ 0 : 100 millivolts
V DD Max (Program/Erase)
DQ 7 -DQ 4 : Volts, DQ 3 -DQ 0 : 100 millivolts
V PP min. (00H = no V PP pin)
V PP max. (00H = no V PP pin)
Typical time out for Word-Program 2 N μs (2 3 = 8 μs)
Typical time out for min. size buffer program 2 N μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2 N ms (2 4 = 16 ms)
Typical time out for Chip-Erase 2 N ms (2 5 = 32 ms)
Maximum time out for Word-Program 2 N times typical (2 1 x 2 3 = 16 μs)
Maximum time out for buffer program 2 N times typical
Maximum time out for individual Sector/Block-Erase 2 N times typical (2 1 x 2 4 = 32
ms)
Maximum time out for Chip-Erase 2 N times typical (2 1 x 2 5 = 64 ms)
T8.3 25028
Table 9: Device Geometry Information for SST39VF1601/1602
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0015H
0001H
0000H
0000H
0000H
0002H
00FFH
0001H
0010H
0000H
001FH
0000H
0000H
0001H
Data
Device size = 2 N Bytes (15H = 21; 2 21 = 2 MByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of byte in multi-byte write = 2 N (00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 511 + 1 = 512 sectors (01FF = 511
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 31 + 1 = 32 blocks (001F = 31)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T9.0 25028
?2011 Silicon Storage Technology, Inc.
13
DS25028A
08/11
相关PDF资料
SST39VF3201B-70-4C-B3KE IC FLASH MPF 32MBIT 70NS 48TFBGA
SST39VF3201B-70-4I-EKE IC FLASH MPF 32MBIT 70NS 48TSOP
SST39VF3202C-70-4I-EKE-T IC FLASH MPF+ 32MBIT 48-TSOP
SST39VF512-70-4I-NHE-T IC MEM MPF 512MBIT FLASH 32PLCC
SST39VF6401B-70-4I-B1KE IC FLASH MPF 64MBIT 70NS 48TFBGA
SST39WF1602-70-4I-MBQE IC FLASH MPF 16MBIT 70NS 48WFBGA
SST39WF400A-90-4I-ZKE IC FLASH MPF 4MBIT 90NS 48CSP
SST39WF400B-70-4I-MAQE-T IC FLASH MPF 4MBIT 70NS 48WFBGA
相关代理商/技术参数
SST39VF3201704IEKE 制造商:Microchip Technology Inc 功能描述:
SST39VF3201-70-4I-EKE 功能描述:闪存 2M X 16 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF3201-70-4I-EKE-T 功能描述:闪存 2.7 to 3.6V 32Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF3201B-70-4C-B3KE 功能描述:闪存 32M (2Mx16) 70ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF3201B704CEKE 制造商:Microchip Technology Inc 功能描述:
SST39VF3201B-70-4C-EKE 功能描述:闪存 32M (2Mx16) 70ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF3201B-70-4I-B3KE 功能描述:闪存 2.7 to 3.6V 32Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF3201B-70-4I-B3KE-T 功能描述:闪存 2.7V to 3.6V 32Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel